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5. C. Gigabit-Rate Picosecond Pulse Generation in FM Mode-Locked Solid-State Lasers Stoichiometric solid-state lasers of high N d density allow the use of very small laser crystals and short laser cavities, t h u s resulting in high-bitrate m o d e locking. M o d e locking in N d stoichiometric laser materials w a s first r e p o r t e d for L N P lasers, w h e r e self-locked optical pulses w e r e ob­ tained at a repetition rate of 600 M H z (Otsuka, 1978). 5P50i4 laser with o u t p u t optical pulses that w e r e 14 p s wide has b e e n r e p o r t e d at a repetition frequency of 480 M H z (Chinn and Z w i c k e r , 1979).

Concerning pulse generation, t h e r e has b e e n no evidence for significant qualitative difference b e t w e e n the (GaAl)As and (GaIn)(AsP) diodes of m a n y different configurations, e x c e p t the q u a n t u m well (Holonyak et al, 1980), o n w h i c h n o e x p e r i m e n t has b e e n r e p o r t e d . E x p e r i m e n t s with the quantum-well laser would b e very interesting, for its unique energy levels and carrier d y n a m i c s as well as for its lasting w a v e l e n g t h s .

1981). , 1982). T h e lock-in r a n g e , defined as 2the detuning range in which injection locking t a k e s place such that |2? 0| > Su (Eext = 0), can be given approxi­ mately by 2m -o> c(l + R ) o>c = K(V/Veff )Eext /[(P < a* -

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